High-power low-divergence semiconductor lasers for GaAs-based 980-nm and InP-based 1550-nm applications

被引：16

作者：

Jeon, H ^{[1
]}

Verdiell, JM ^{[1
]}

Ziari, M ^{[1
]}

Mathur, A ^{[1
]}

机构：

[1] SDL Inc, San Jose, CA 95134 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 06期

关键词：

adiabiatic-mode transformers; optical fiber coupling; optical mode expansion; semiconductor lasers; vertical tapers; waveguide transitions;

D O I：

10.1109/2944.658788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power diode lasers with low-vertical divergence and high-fiber coupling efficiency were developed for GaAs-based 980-nm pump lasers and InP-based 1550-nm Fabry-Perot and distributed-feedback (DFB) lasers, Narrow divergence at 980 nm was made possible by a large optical-mode waveguide design, with full-width at half-maximum (FWHM) far-field angles of 11.7 degrees x 17.8 degrees and coupling efficiency of 80% into a cleaved single-mode fiber (SMF), A vertical taper processing technique was developed for InP-based laser structures, Fabry-Perot lasers produced over 90-mW output power, 17 degrees x 16 degrees FWHM beam divergence angles, and 63% coupling efficiency into a lensed SMF, The vertical taper was successfully integrated in 1550-nm DFB lasers, and over 80-mW single-mode output power with beam divergence angles of 12 degrees x 14 degrees was obtained.

引用

页码：1344 / 1350

页数：7

共 21 条

[1] Wide-temperature-range operation of 1.3-mu m beam expander-integrated laser diodes grown by in-plane thickness control MOVPE using a silicon shadow mask [J].