Correlation between Er3+ emission and the microstructure of a-SiOx:H<Er> films

被引：1

作者：

Chen, CY ^{[1
]}

Chen, WD ^{[1
]}

Song, SF ^{[1
]}

Hsu, CC ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2002年 / 16卷 / 28-29期

关键词：

D O I：

10.1142/S0217979202015182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide (a-SiOX:H<Er>(x<2.0)) films was measured. Two luminescence bands with maxima at lambda congruent to 750 nm and lambda congruent to 1.54mum, ascribed to the a-SiOX:H intrinsic emission and Er3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000degreesC. Micro-Raman results indicate that the a-SiOX:H<Er> films are a mixture of two phases, an amorphous SiOX matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a-SiOX:H<Er> films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er3+ emission. Our study emphasizes the role of a-Si domains on Er3+ emission in a-SiOX:H<Er> films.

引用

页码：4246 / 4249

页数：4

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Correlation between Er3+ emission and the microstructure of a-SiOx:H&lt;Er&gt; films

Correlation between Er3+ emission and the microstructure of a-SiOx:H<Er> films