Influence of channel depletion on the carrier charging characteristics in Si nanocrystal floating gate memory

被引：10

作者：

Ohba, R ^{[1
]}

Sugiyama, N ^{[1
]}

Koga, J ^{[1
]}

Uchida, K ^{[1
]}

Toriumi, A ^{[1
]}

机构：

[1] Toshiba Corp, Ctr Res & Dev, Adv LSI Technol Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 3A期

关键词：

silicon; nanocrystal; floating gate; memory; direct tunneling; double peak; threshold voltage; flat-band voltage; depletion; retention;

D O I：

10.1143/JJAP.39.989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The carrier charging/discharging characteristics in a multidot Si nanocrystal floating gate memory are investigated by measuring the gate current directly. To detect a small gate current, we use a large device-size memory. In the gate current characteristics, double peak structures, with one of the peaks at the threshold voltage and the other at the flat-band voltage, are found. The separation into two peaks is shown to be due to the change of the charging/discharging carrier sources between the source/drain and the substrate in the channel depletion region. These show that the carrier charging/discharging characteristics change critically at each of the threshold voltage and the Bat-band voltage. Charging/discharging rate reduction due to the surface potential flexibility and the carrier number shortage in the channel depletion region is proposed to explain the critical changes.

引用

页码：989 / 993

页数：5

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