Fabrication of nano-crystal silicon on SiO2 using the agglomeration process

被引：16

作者：

Sugiyama, N ^{[1
]}

Tezuka, T ^{[1
]}

Kurobe, A ^{[1
]}

机构：

[1] Toshiba Res & Dev Ctr, Adv Res Lab, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 192卷 / 3-4期

关键词：

nano-crystal; quantum dot; agglomeration;

D O I：

10.1016/S0022-0248(98)00497-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new method for fabricating silicon nano-crystal on an oxide layer is proposed. The agglomeration phenomenon is applied, in which the silicon atoms in a thin amorphous layer on the oxide film migrate and form a hemispherical mass during the annealing. It is demonstrated that the nano-crystal dots which have a diameter of 13 nm are formed with the density of 1 x 10(11) cm(-2) by annealing the amorphous silicon layer of 1 nm on the oxide in ultra-high vacuum for 3 min at 830 degrees C. The mechanism of agglomeration is proposed, and the possibility of controlling the size and the density of nanocrystal dots is also discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：395 / 401

页数：7

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