Band alignments in GaInP/GaP/GaAs/GaP/GaInP quantum wells

被引：15

作者：

Kwok, SH

Yu, PY

Uchida, K

Arai, T

机构：

[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

[2] NIPPON SANSO CO,TSUKUBA LABS,TSUKUBA,IBARAKI 30033,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 08期

关键词：

D O I：

10.1063/1.119742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pressure-dependent photoluminescence (PL) in several GaInP(ordered)-GaAs quantum well structures grown by metal organic vapor phase epitaxy is reported. Quantum well emission from GaAs is observed only in structures when thin (similar to 2 nm) GaP layers an inserted between the GaAs well and the GaInP barrier. By extrapolating the energies of the various inter and intralayer PL transitions observed under pressures (up to 5.5 GPa) to zero pressure, the different band offsets of the heterostructure have been determined. (C) 1997 American Institute of Physics.

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页码：1110 / 1112

页数：3

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