BAND OFFSETS OF GA0.5IN0.5P GAAS SINGLE QUANTUM-WELLS FROM PRESSURE-INDUCED TYPE-II TRANSITIONS

被引：26

作者：

LEROUX, M

FILLE, ML

GIL, B

LANDESMAN, JP

GARCIA, JC

机构：

[1] UNIV MONTPELLIER 2,ETUDES SEMICOND GRP,F-34095 MONTPELLIER 5,FRANCE

[2] THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.47.6465

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on high-pressure, low-temperature photoluminescence of Ga0.5In0.5P/GaAs single quantum wells grown by metalorganic-molecular-beam epitaxy. A type-I-type-II (and GAMMA-X) transition occurs at P=3.25+/-0.1 GPa for all well widths (from 10 to 70 angstrom), in contrast to what is observed in (Al,Ga)As/GaAs quantum wells. Using envelope-function calculations for the type-II transitions, a valence-band offset of 330+/-20 meV is deduced independent of pressure, within experimental precision. This is in good agreement with a previous photoreflectance study and with recent theoretical predictions on such heterostructures.

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收藏

页码：6465 / 6469

页数：5

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