EVIDENCE OF TYPE-II BAND ALIGNMENT AT THE ORDERED GAINP TO GAAS HETEROINTERFACE

被引:66
作者
LIU, Q
DERKSEN, S
LINDER, A
SCHEFFER, F
PROST, W
TEGUDE, FJ
机构
[1] Solid State Electronics Department, Gerhard-Mercator-University GH Duisburg, D-47057 Duisburg
关键词
D O I
10.1063/1.358979
中图分类号
O59 [应用物理学];
学科分类号
摘要
Interfacial characteristics of Ga0.51In0.49P/GaAs heterostructures grown by metal-organic vapor-phase epitaxy in the temperature range from 600°C to 730°C were studied. Photoluminescence (PL) measurements have been used for this purpose. A PL peak with an energy of about 1.425 eV (870 nm) was continuously observed in samples containing the GaInP-to-GaAs interface. Excitation power dependent PL measurements show that this peak belongs to an excitonic recombination. Furthermore, a strong blue-shift of this PL-peak energy was observed as the excitation power increased. We attribute the 870 nm peak to the radiative recombination of spatially separated electron-hole pairs and suggest the type-II band alignment at the ordered GaInP to GaAs heterointerface under growth conditions reported here. Further investigations using x-ray diffraction measurements and simulations with dynamical theory show that the lower and upper interfaces are not equivalent. This explains the absence of type-II transition in most GaAs-to-GaInP lower interfaces. © 1995 American Institute of Physics.
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页码:1154 / 1158
页数:5
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