Tube-in-Tube and Wire-in-Tube Nano Building Blocks: Towards the Realization of Multifunctional Nanoelectronic Devices

被引:16
作者
Ben Ishai, Moshit [1 ]
Patolsky, Fernando [1 ]
机构
[1] Tel Aviv Univ, Raymond & Beverly Sackler Fac Exact Sci, Sch Chem, IL-69978 Tel Aviv, Israel
关键词
germanium; nanotechnology; nanotubes; nanowires; silicon; STRANSKI-KRASTANOW GROWTH; EPITAXIAL CORE-SHELL; SILICON NANOWIRES; NANOTUBES; GE; HETEROSTRUCTURES; TRANSISTORS; MOBILITY; ARRAYS; SI;
D O I
10.1002/anie.200903583
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Tubularbellsandwrestles: Buildingadditionalfuncticalityintenanotubesbycontrolledsynthesismayenablenoye larchitecuresandenhanced(opto)electronicdevices. Thecompetitionofeachwallinnovelshollowcrystallinesiliconnanostructures(tube-in- tubeandwire-in-tubenanostructures)canbeindependentlydefined, andtheinterwalldistanceandwallthicknesscanbecontrolled(picture: triple-WallednanotubeandcorrespondingTEMimages. © 2009 Wiley-VCH Verlag GmbH &. Co. KCaA.
引用
收藏
页码:8699 / 8702
页数:4
相关论文
共 25 条
[1]   Shape- and Dimension-Controlled Single-Crystalline Silicon and SiGe Nanotubes: Toward Nanofluidic FET Devices [J].
Ben Ishai, Moshit ;
Patolsky, Fernando .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2009, 131 (10) :3679-3689
[2]   High-performance lithium battery anodes using silicon nanowires [J].
Chan, Candace K. ;
Peng, Hailin ;
Liu, Gao ;
McIlwrath, Kevin ;
Zhang, Xiao Feng ;
Huggins, Robert A. ;
Cui, Yi .
NATURE NANOTECHNOLOGY, 2008, 3 (01) :31-35
[3]   Doping and electrical transport in silicon nanowires [J].
Cui, Y ;
Duan, XF ;
Hu, JT ;
Lieber, CM .
JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (22) :5213-5216
[4]   Synthesis of branched 'nanotrees' by controlled seeding of multiple branching events [J].
Dick, KA ;
Deppert, K ;
Larsson, MW ;
Mårtensson, T ;
Seifert, W ;
Wallenberg, LR ;
Samuelson, L .
NATURE MATERIALS, 2004, 3 (06) :380-384
[5]   DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].
EAGLESHAM, DJ ;
CERULLO, M .
PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946
[6]   Performance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels [J].
Fossum, JG ;
Zhang, WM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (04) :1042-1049
[7]   Inorganic nanotubes: A novel platform for nanofluidics [J].
Goldberger, J ;
Fan, R ;
Yang, PD .
ACCOUNTS OF CHEMICAL RESEARCH, 2006, 39 (04) :239-248
[8]   Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x < y) virtual substrate [J].
Jung, JW ;
Lee, ML ;
Yu, SF ;
Fitzgerald, EA ;
Antoniadis, DA .
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (07) :460-462
[9]   Misfit dislocation loops and critical parameters of quantum dots and wires [J].
Kolesnikova, AL ;
Romanov, AE .
PHILOSOPHICAL MAGAZINE LETTERS, 2004, 84 (08) :501-506
[10]   Epitaxial core-shell and core-multishell nanowire heterostructures [J].
Lauhon, LJ ;
Gudiksen, MS ;
Wang, CL ;
Lieber, CM .
NATURE, 2002, 420 (6911) :57-61