High-performance bottom-contact organic thin-film transistors with controlled molecule-crystal/electrode interface

被引：60

作者：

Xu, Mingsheng

Nakamura, Masakazu

Sakai, Masatoshi

Kudo, Kazuhiro

机构：

[1] Chiba Univ, Venture Business Lab, Inage Ku, Chiba 2638355, Japan

[2] Chiba Univ, Dept Elect & Mech Engn, Inage Ku, Chiba 2638355, Japan

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 03期

关键词：

D O I：

10.1002/adma.200601792

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An improvement of the performance of bottom-contact organic thin-film transistors is demonstrated by embedding and planarizing the source/drain electrodes in a gate dielectric. The electric contact with the pentacene active layer is superior to conventional electrode configurations because of the favorable growth of pentacene grains adjacent to the source/drain electrode edges: these can be seen in the figure.

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页码：371 / +

页数：6

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