Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x

被引：232

作者：

Skierbiszewski, C

Perlin, P

Wisniewski, P

Knap, W

Suski, T

Walukiewicz, W

Shan, W

Yu, KM

Ager, JW

Haller, EE

Geisz, JF

Olson, JM

机构：

[1] Polish Acad Sci, UNIPRESS, PL-01142 Warsaw, Poland

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Mat Sci & Mineral Engn, Berkeley, CA 94720 USA

[4] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 17期

关键词：

D O I：

10.1063/1.126360

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A dramatic increase of the conduction band electron mass in a nitrogen-containing III-V alloy is reported. The mass is found to be strongly dependent on the nitrogen content and the electron concentration with a value as large as 0.4m(0) in In0.08Ga0.92As0.967N0.033 with 6x10(19) cm(-3) free electrons. This mass is more than five times larger than the electron effective mass in GaAs and comparable to typical heavy hole masses in III-V compounds. The results provide a critical test and fully confirm the predictions of the recently proposed band anticrossing model of the electronic structure of the III-N-V alloys. (C) 2000 American Institute of Physics. [S0003-6951(00)04817-8].

引用

页码：2409 / 2411

页数：3

共 18 条

[1] Bowing parameter of the band-gap energy of GaNxAs1-x [J].