Impedance spectroscopy measurements of charge carrier mobility in 4,4′-N,N′-dicarbazole-biphenyl thin films doped with tris(2-phenylpyridine) iridium

被引:23
作者
Ishihara, Shingo [1 ,2 ,3 ]
Okachi, Takayuki [1 ]
Naito, Hiroyoshi [1 ,2 ]
机构
[1] Osaka Prefecture Univ, Dept Phys & Elect, Naka Ku, Osaka 5998531, Japan
[2] Osaka Prefecture Univ, Res Inst Mol Elect Devices, Naka Ku, Osaka 5998531, Japan
[3] Hitachi Ltd, Mat Res Lab, Hitachi, Ibaraki 3191292, Japan
关键词
Organic light-emitting diodes; Impedance spectroscopy; Mobility; CBP; Ir(ppy)(3); LIGHT-EMITTING-DIODES; GREEN ELECTROPHOSPHORESCENT DEVICES; ADMITTANCE SPECTROSCOPY; EMISSIVE LAYER; TRANSPORT; VINYLENE); TRANSIENT;
D O I
10.1016/j.tsf.2009.07.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The charge carrier mobility of green phosphorescent emissive layers, tris(2-phenylpyridine) iridium [Ir(ppy)(3)]-doped 4,4'-N,N'-dicarbazole-biphenyl (CBP) thin films, has been determined using impedance spectroscopy (IS) measurements. The theoretical basis of mobility measurement by IS rests on a theory for single-injection space-charge limited current. The hole mobilities of the Ir(ppy)(3)-doped CBP thin films were measured to be 10(-10)-10(-8) cm(2)V(-1)s(-1) in the 2-7wt.% Ir(ppy)(3)-doped CBP from the frequency dependence of both conductance and capacitance. These hole mobility values are much lower than those of the undoped CBP thin films (similar to 10(-3) cm(2)V(-1)s(-1)) because the Ir(ppy)(3) molecules act as trapping centers in the CBP host matrix. These mobility measurements in the Ir(ppy)(3)-doped CBP thin films provide insight into the hole injection process. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:452 / 456
页数:5
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