Substrate dependent charge injection at the V2O5/organic interface

被引：20

作者：

Helander, M. G. ^{[1
]}

Wang, Z. B. ^{[1
]}

Greiner, M. T. ^{[1
]}

Qiu, J. ^{[1
]}

Lu, Z. H. ^{[1
]}

机构：

[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 08期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Fermi level; interface states; organic compounds; vanadium compounds; VANADIUM PENTOXIDE; GAP STATES; BARRIER; ELECTRODE; SURFACE;

D O I：

10.1063/1.3213553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge injection at the interface between V2O5 and N,N-'-diphenyl-N,N-'-bis-(1-naphthyl)-1-1(')-biphenyl-4,4(')-diamine (alpha-NPD) was studied. It is found that the energy-level alignment at the V2O5/alpha-NPD is dependent on the underlying substrate, in contrast to previous reports. This phenomenon is consistent with interface dipole theory for weakly pinning interfaces. V2O5 is found to weakly pin the Fermi level, such that the underlying substrate still influences the dipole between V2O5 and alpha-NPD. The charge neutrality level of V2O5 is also found to be 5.35 eV.

引用

页数：3

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