Self-consistent solution of the Schrodinger equation in semiconductor devices by implicit iteration

被引:55
作者
Pacelli, A [1 ]
机构
[1] POLITECN MILAN,CNR,CEQSE,I-20133 MILAN,ITALY
关键词
D O I
10.1109/16.595946
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel iteration scheme for the self-consistent solution of the Schrodinger-Poisson system in semiconductor devices is presented. The information from the eigenvalue problem is used to obtain a nonlinear Poisson equation that can be solved with the Newton method. The scheme has good stability properties and fast convergence. Examples are presented for the one-dimensional (1-D) calculation of quantized states in surface-channel and buried-channel MOS devices.
引用
收藏
页码:1169 / 1171
页数:3
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