Effect of Te as a surfactant on the optical properties of InAs self-assembled quantum dots

被引:14
作者
Safar, GAM
Rodrigues, WN
Cury, LA
Chacham, H
Moreira, MVB
Freire, SLS
deOliveira, AG
机构
[1] Departamento de Física, Instituto de Ciências Exatas, Universidade Federal de Minas Gerais, C.P. 702, 30123-970, Belo Horizonte
关键词
D O I
10.1063/1.119597
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on optical experiments in self-assembled InAs quantum dots grown on (100) and (311)A GaAs surfaces which were precovered with Te. We observe a strong reduction of the luminescence intensity with increasing Te coverage in the (100)-oriented samples. The Te-induced luminescence reduction is, however, much smaller in the (311)A oriented samples. (C) 1997 American Institute of Physics.
引用
收藏
页码:521 / 523
页数:3
相关论文
共 18 条
[1]   Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots [J].
Adler, F ;
Geiger, M ;
Bauknecht, A ;
Scholz, F ;
Schweizer, H ;
Pilkuhn, MH ;
Ohnesorge, B ;
Forchel, A .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) :4019-4026
[2]  
CHRISTENSEN NE, 1984, PHYS REV B, V30, P5753, DOI 10.1103/PhysRevB.30.5753
[3]   Quasiperiodic microfacets on the surface of AlGaAs/GaAs quantum well structures grown by molecular beam epitaxy on (311)A high-index substrates [J].
Freire, SLS ;
Cury, LA ;
Matinaga, FM ;
Valadares, EC ;
Moreira, MVB ;
deOliveira, AG ;
Alves, AR ;
Vilela, JMC ;
Andrade, MS ;
Lima, TM ;
Sluss, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :3555-3558
[4]   Electronic structure and optical properties of self-assembled quantum dots [J].
Hawrylak, P ;
Wojs, A .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (11) :1516-1520
[5]   SURFACTANT-STABILIZED STRAINED GE CONES ON SI(001) [J].
HORNVONHOEGEN, M ;
ALFALOU, A ;
MULLER, BH ;
KOHLER, U ;
ANDERSOHN, L ;
DAHLHEIMER, B ;
HENZLER, M .
PHYSICAL REVIEW B, 1994, 49 (04) :2637-2650
[6]   NANOSCALE INP ISLANDS EMBEDDED IN INGAP [J].
KURTENBACH, A ;
EBERL, K ;
SHITARA, T .
APPLIED PHYSICS LETTERS, 1995, 66 (03) :361-363
[7]   STRUCTURAL AND OPTICAL-PROPERTIES OF SELF-ASSEMBLED INGAAS QUANTUM DOTS [J].
LEONARD, D ;
FAFARD, S ;
POND, K ;
ZHANG, YH ;
MERZ, JL ;
PETROFF, PM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2516-2520
[8]   PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS [J].
MARZIN, JY ;
GERARD, JM ;
IZRAEL, A ;
BARRIER, D ;
BASTARD, G .
PHYSICAL REVIEW LETTERS, 1994, 73 (05) :716-719
[9]   SURFACTANT MEDIATED EPITAXIAL-GROWTH OF INXGA1-XAS ON GAAS (001) [J].
MASSIES, J ;
GRANDJEAN, N ;
ETGENS, VH .
APPLIED PHYSICS LETTERS, 1992, 61 (01) :99-101
[10]   EFFECTIVE MASSES OF ELECTRONS AND HEAVY HOLES IN GAAS, INAS, ALAS AND THEIR TERNARY COMPOUNDS [J].
NAKWASKI, W .
PHYSICA B, 1995, 210 (01) :1-25