Chemical compositions and optical properties of HfOxNy thin films at different substrate temperatures

被引：8

作者：

Liu, M. ^{[1
]}

Fang, Q.

He, G.

Zhu, L. Q.

Pan, S. S.

Zhang, L. D.

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China

[2] UCL, London WC1E 7JE, England

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2006年 / 9卷 / 06期

关键词：

high-k; optical properties; band gap; HfOxNy thin films;

D O I：

10.1016/j.mssp.2006.10.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-k HfOxNy thin films have been grown by radio frequency (rf) reactive sputtering of metal Hf target in N-2/Ar/O-2 ambient at different substrate temperatures. The chemical compositions of the films have been investigated as a function of substrate temperature by X-ray photoelectron spectroscopy (XPS). XPS measurements showed that nitrogen concentration increases with an increase in substrate temperature. Room-temperature spectroscopic ellipsornetry (SE) with photon energy 0.75-6.5 eV was used to investigate the optical properties of the films. SE results demonstrated that refractive index n increases with an increase in substrate temperature. Based on TL parameters which were obtained from the best fit results used in a simulation of the measured spectra, meanwhile, we conclude that the energy band gap (E,) decreases with an increase in substrate temperature. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：876 / 879

页数：4

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