共 23 条
Carbon nanotube diode fabricated by contact engineering with self-assembled molecules
被引:16
作者:

Kim, Byoung-Kye
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机构:
Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea

Kim, Ju-Jin
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机构: Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea

So, Hye-Mi
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h-index: 0
机构: Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea

Kong, Ki-jeong
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机构: Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea

Chang, Hyunju
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机构: Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea

Lee, Jeong-O
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机构: Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea

Park, Noejung
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机构: Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea
机构:
[1] Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea
[2] Korea Res Inst Chem Technol, Adv Mat Div, Taejon 305600, South Korea
[3] Dankook Univ, Dept Appl Phys, Seoul 140714, South Korea
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D O I:
10.1063/1.2403929
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The authors report the construction of carbon nanotube Schottky diodes by covering a selectively exposed area of the electrode with self-assembling molecules. Two self-assembling molecules with different polarities, 2-aminoethanethiol and 3-mercaptopropionic acid, were used to modify the Fermi level lineup at the selected contact. The devices showed p-type behavior with symmetric I-V showing clear rectifying behavior after treatment of one contact with 2-aminoethanethiol. Their experiment, in conjunction with the results of ab initio electronic structure calculations, suggests that the diode action stems from the asymmetric Fermi level lineup between the bare and engineered contacts. (c) 2006 American Institute of Physics.
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