A thermally resistant and air-stable n-type organic semiconductor: Naphthalene diimide of 3,5-bis-trifluoromethyl aniline

被引：27

作者：

Jung, Yunoh ^{[1
]}

Baeg, Kang-Jun ^{[2
]}

Kim, Dong-Yu ^{[2
]}

Someya, Takao ^{[3
]}

Park, Soo Young ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Ctr Supramol Optoelect Mat, Seoul 151744, South Korea

[2] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Heeger Ctr Adv Mat, Kwangju 500712, South Korea

[3] Univ Tokyo, Sch Engn, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan

来源：

SYNTHETIC METALS | 2009年 / 159卷 / 19-20期

关键词：

n-Type semiconductor; Air stability; Thermal stability; Naphthalene diimide; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; HIGH-ELECTRON-MOBILITY; CHARGE-TRANSPORT; DERIVATIVES; CIRCUITS; RATIOS;

D O I：

10.1016/j.synthmet.2009.08.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a thermally resistant and air-stable n-type semiconductor based on our study of naphthalene diimide (NTCDI) derivatives (NI, N2, and N3) with various numbers of electron-withdrawing CF3 groups. The device using N3, which contains aromatic NTCDI, was found to exhibit an electron mobility (mu(e)) of 0.15 (+/- 0.04)cm(2)/V s (the maximum mu(e) observed was 0.24 cm(2)/V s) and an I-on/I-off (at V-d = 80V) of approximately 2 x 10(5). Moreover, the N3 device exhibits excellent air stability, even when exposed to the open air for 42 days, and significantly better thermal resistance than the previously reported benzylic imide derivative R1. (c) 2009 Elsevier B.V. All rights reserved.

引用

页码：2117 / 2121

页数：5

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