New developments in CdTe and CdZnTe detectors for x and gamma-ray applications

被引:68
作者
Veger, L
Bonnefoy, JP
Glasser, F
OuvrierBuffet, P
机构
[1] LETI, DSYS/CEA Grenoble, 38054 - Grenoble Cedex, 17, rue des Martyrs
关键词
CdTe detectors; CdZnTe detectors; pulse height correction method; x- and gamma-ray applications; x-ray imager;
D O I
10.1007/s11664-997-0225-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
There has been considerable resent progress in II-VI semiconductor material and in methods for improving performance of the associated radiation detectors. New high resistivity CdZnTe material, new contact technologies, new detector structures, new electronic correction methods have opened the field of nuclear and x-ray imaging for industrial and medical applications. The purpose of this paper is to review new developments in several of these fields. In addition, we will present some recent results at LETI concerning first the CdTe 2-D imaging system (20 x 30 mm(2) with 400 x 600 pixels) for dental radiology and second the CdZnTe fast pulse correction method applied to a 5 x 5 x 5 mm(3) CdZnTe detector (energy resolution = 5% for detection efficiency of 85% at 122 keV) for medical imaging.
引用
收藏
页码:738 / 744
页数:7
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