Ultrahigh-sensitive AlGaAs-GaAs punchthrough heterojunction phototransistor

被引：18

作者：

Han, DJ ^{[1
]}

Li, GH ^{[1
]}

Yan, FZ ^{[1
]}

Zhu, EJ ^{[1
]}

机构：

[1] BEIJING NORMAL UNIV, INST LOW ENERGY NUCL PHYS, BEIJING 100875, PEOPLES R CHINA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 10期

关键词：

guard-ring emitter structure; optical conversion gain; photodetector; phototransistor; sensitivity;

D O I：

10.1109/68.623273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An avalanche enhanced AlGaAs-GaAs punchthrough heterojunction phototransistor with an improved guard-ring emitter structure has been proposed. It has demonstrated a record high sensitivity of 5750 A/W and optical conversion gain of 10 810 at 400-nW incident optical power level. Its novel guard-ring emitter structure can suppress peripheral recombination current more effectively, provide capability to enhance and tune the optical conversion gain at low-incident optical power and reduce the effective emitter area.

引用

页码：1391 / 1393

页数：3

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