HIGH-GAIN GAINP/GAAS HETEROJUNCTION PHOTOTRANSISTOR UTILIZING GUARD-RING STRUCTURE

被引：5

作者：

TWYNAM, JK ^{[1
]}

CLAXTON, PA ^{[1
]}

WOODS, RC ^{[1
]}

WIGHT, DR ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 02期

关键词：

D O I：

10.1049/el:19890063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：85 / 86

页数：2

共 5 条

[1] GROWTH AND CHARACTERIZATION OF QUANTUM-WELLS AND SELECTIVELY DOPED HETEROSTRUCTURES OF INP/GA0.47IN0.53AS GROWN BY SOLID SOURCE MBE [J].

CLAXTON, PA ;

ROBERTS, JS ;

DAVID, JPR ;

SOTOMAYORTORRES, CM ;

SKOLNICK, MS ;

TAPSTER, PR ;

NASH, KJ .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :288-295

[2] HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD [J].

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :126-130

[3] HETEROJUNCTION BIPOLAR-TRANSISTOR USING A (GA,IN)P EMITTER ON A GAAS BASE, GROWN BY MOLECULAR-BEAM EPITAXY [J].

MONDRY, MJ ;

KROEMER, H .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) :175-177

[4] DETERMINATION OF VALENCE AND CONDUCTION-BAND DISCONTINUITIES AT THE (GA,IN) P/GAAS HETEROJUNCTION BY C-V PROFILING [J].

RAO, MA ;

CAINE, EJ ;

KROEMER, H ;

LONG, SI ;

BABIC, DI .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :643-649

[5] AN EMITTER GUARD-RING STRUCTURE FOR GAAS HIGH-GAIN HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ZHU, EJ ;

FISCHER, R ;

HENDERSON, T ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (02) :91-93

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