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Oxide electronics emerge
被引:124
作者
:
Ramirez, Arthur P.
论文数:
0
引用数:
0
h-index:
0
机构:
Alcatel Lucent, Bell Labs, Murray Hill, NJ 07974 USA
Alcatel Lucent, Bell Labs, Murray Hill, NJ 07974 USA
Ramirez, Arthur P.
[
1
]
机构
:
[1]
Alcatel Lucent, Bell Labs, Murray Hill, NJ 07974 USA
来源
:
SCIENCE
|
2007年
/ 315卷
/ 5817期
关键词
:
D O I
:
10.1126/science.1138578
中图分类号
:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号
:
07 ;
0710 ;
09 ;
摘要
:
[No abstract available]
引用
收藏
页码:1377 / 1378
页数:2
相关论文
共 17 条
[11]
A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
[J].
Ohtomo, A
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
Ohtomo, A
;
Hwang, HY
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
Hwang, HY
.
NATURE,
2004,
427
(6973)
:423
-426
[12]
TWO-DIMENSIONAL MAGNETOTRANSPORT IN THE EXTREME QUANTUM LIMIT
[J].
TSUI, DC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
TSUI, DC
;
STORMER, HL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
STORMER, HL
;
GOSSARD, AC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
GOSSARD, AC
.
PHYSICAL REVIEW LETTERS,
1982,
48
(22)
:1559
-1562
[13]
Quantum Hall effect in polar oxide heterostructures
[J].
论文数:
引用数:
h-index:
机构:
Tsukazaki, A.
;
Ohtomo, A.
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Ohtomo, A.
;
Kita, T.
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Kita, T.
;
论文数:
引用数:
h-index:
机构:
Ohno, Y.
;
Ohno, H.
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Ohno, H.
;
Kawasaki, M.
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Kawasaki, M.
.
SCIENCE,
2007,
315
(5817)
:1388
-1391
[14]
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
[J].
论文数:
引用数:
h-index:
机构:
Tsukazaki, A
;
论文数:
引用数:
h-index:
机构:
Ohtomo, A
;
Onuma, T
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Onuma, T
;
Ohtani, M
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Ohtani, M
;
Makino, T
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Makino, T
;
Sumiya, M
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Sumiya, M
;
Ohtani, K
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Ohtani, K
;
Chichibu, SF
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Chichibu, SF
;
Fuke, S
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Fuke, S
;
Segawa, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Segawa, Y
;
Ohno, H
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Ohno, H
;
Koinuma, H
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Koinuma, H
;
Kawasaki, M
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Kawasaki, M
.
NATURE MATERIALS,
2005,
4
(01)
:42
-46
[15]
Mechanisms behind green photoluminescence in ZnO phosphor powders
[J].
Vanheusden, K
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Vanheusden, K
;
Warren, WL
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Warren, WL
;
Seager, CH
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Seager, CH
;
Tallant, DR
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Tallant, DR
;
Voigt, JA
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Voigt, JA
;
Gnade, BE
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Gnade, BE
.
JOURNAL OF APPLIED PHYSICS,
1996,
79
(10)
:7983
-7990
[16]
VONKLITZING K, 1980, PHYS REV LETT, V45, P494, DOI 10.1103/PhysRevLett.45.494
[17]
A field effect transistor based on the Mott transition in a molecular layer
[J].
Zhou, C
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
Zhou, C
;
Newns, DM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
Newns, DM
;
Misewich, JA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
Misewich, JA
;
Pattnaik, PC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
Pattnaik, PC
.
APPLIED PHYSICS LETTERS,
1997,
70
(05)
:598
-600
←
1
2
→
共 17 条
[11]
A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
[J].
Ohtomo, A
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
Ohtomo, A
;
Hwang, HY
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
Hwang, HY
.
NATURE,
2004,
427
(6973)
:423
-426
[12]
TWO-DIMENSIONAL MAGNETOTRANSPORT IN THE EXTREME QUANTUM LIMIT
[J].
TSUI, DC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
TSUI, DC
;
STORMER, HL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
STORMER, HL
;
GOSSARD, AC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
GOSSARD, AC
.
PHYSICAL REVIEW LETTERS,
1982,
48
(22)
:1559
-1562
[13]
Quantum Hall effect in polar oxide heterostructures
[J].
论文数:
引用数:
h-index:
机构:
Tsukazaki, A.
;
Ohtomo, A.
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Ohtomo, A.
;
Kita, T.
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Kita, T.
;
论文数:
引用数:
h-index:
机构:
Ohno, Y.
;
Ohno, H.
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Ohno, H.
;
Kawasaki, M.
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Kawasaki, M.
.
SCIENCE,
2007,
315
(5817)
:1388
-1391
[14]
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
[J].
论文数:
引用数:
h-index:
机构:
Tsukazaki, A
;
论文数:
引用数:
h-index:
机构:
Ohtomo, A
;
Onuma, T
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Onuma, T
;
Ohtani, M
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Ohtani, M
;
Makino, T
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Makino, T
;
Sumiya, M
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Sumiya, M
;
Ohtani, K
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Ohtani, K
;
Chichibu, SF
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Chichibu, SF
;
Fuke, S
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Fuke, S
;
Segawa, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Segawa, Y
;
Ohno, H
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Ohno, H
;
Koinuma, H
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Koinuma, H
;
Kawasaki, M
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Kawasaki, M
.
NATURE MATERIALS,
2005,
4
(01)
:42
-46
[15]
Mechanisms behind green photoluminescence in ZnO phosphor powders
[J].
Vanheusden, K
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Vanheusden, K
;
Warren, WL
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Warren, WL
;
Seager, CH
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Seager, CH
;
Tallant, DR
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Tallant, DR
;
Voigt, JA
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Voigt, JA
;
Gnade, BE
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Gnade, BE
.
JOURNAL OF APPLIED PHYSICS,
1996,
79
(10)
:7983
-7990
[16]
VONKLITZING K, 1980, PHYS REV LETT, V45, P494, DOI 10.1103/PhysRevLett.45.494
[17]
A field effect transistor based on the Mott transition in a molecular layer
[J].
Zhou, C
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
Zhou, C
;
Newns, DM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
Newns, DM
;
Misewich, JA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
Misewich, JA
;
Pattnaik, PC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
Pattnaik, PC
.
APPLIED PHYSICS LETTERS,
1997,
70
(05)
:598
-600
←
1
2
→