Oxide electronics emerge

被引:124
作者
Ramirez, Arthur P. [1 ]
机构
[1] Alcatel Lucent, Bell Labs, Murray Hill, NJ 07974 USA
关键词
D O I
10.1126/science.1138578
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
[No abstract available]
引用
收藏
页码:1377 / 1378
页数:2
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共 17 条
[11]   A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface [J].
Ohtomo, A ;
Hwang, HY .
NATURE, 2004, 427 (6973) :423-426
[12]   TWO-DIMENSIONAL MAGNETOTRANSPORT IN THE EXTREME QUANTUM LIMIT [J].
TSUI, DC ;
STORMER, HL ;
GOSSARD, AC .
PHYSICAL REVIEW LETTERS, 1982, 48 (22) :1559-1562
[13]   Quantum Hall effect in polar oxide heterostructures [J].
Tsukazaki, A. ;
Ohtomo, A. ;
Kita, T. ;
Ohno, Y. ;
Ohno, H. ;
Kawasaki, M. .
SCIENCE, 2007, 315 (5817) :1388-1391
[14]   Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO [J].
Tsukazaki, A ;
Ohtomo, A ;
Onuma, T ;
Ohtani, M ;
Makino, T ;
Sumiya, M ;
Ohtani, K ;
Chichibu, SF ;
Fuke, S ;
Segawa, Y ;
Ohno, H ;
Koinuma, H ;
Kawasaki, M .
NATURE MATERIALS, 2005, 4 (01) :42-46
[15]   Mechanisms behind green photoluminescence in ZnO phosphor powders [J].
Vanheusden, K ;
Warren, WL ;
Seager, CH ;
Tallant, DR ;
Voigt, JA ;
Gnade, BE .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7983-7990
[16]  
VONKLITZING K, 1980, PHYS REV LETT, V45, P494, DOI 10.1103/PhysRevLett.45.494
[17]   A field effect transistor based on the Mott transition in a molecular layer [J].
Zhou, C ;
Newns, DM ;
Misewich, JA ;
Pattnaik, PC .
APPLIED PHYSICS LETTERS, 1997, 70 (05) :598-600