Formation of single and double self-organized InAs quantum dot by selective area metal-organic vapor phase epitaxy

被引：36

作者：

Hahn, CK ^{[1
]}

Motohisa, J ^{[1
]}

Fukui, T ^{[1
]}

机构：

[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Sapporo, Hokkaido 0608628, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 26期

关键词：

D O I：

10.1063/1.126830

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Position- and number-controlled InAs self-organized quantum dots (SOQDs) were formed by selective-area-metal-organic chemical vapor phase epitaxy on the partially SiNx patterned GaAs (001) substrate. The mask layer was patterned along the [110] direction, and somewhat wider rectangular openings were also attached to the line. As a result of GaAs SA growth, a pyramidal shaped structure was formed on the rectangular region of the pattern. The top area of the pyramidal structure is a very narrow hexagonal-shaped (001) facet which is surrounded by two-{111}B and four-{124} facets. The SOQD was preferentially formed on the top (001) facet because the growth rate on the (001) facet is far much higher than on the surrounding sidewalls. It is found that the number of SOQDs formed is strongly dependent on the width of the top (001)-facet so that control of single, double, and multiple SOQD(s) is possible. (C) 2000 American Institute of Physics. [S0003-6951(00)05526-1].

引用

页码：3947 / 3949

页数：3

共 12 条

[1] Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask material [J].

Hahn, CK ;

Park, YJ ;

Kim, EK ;

Min, SK ;

Jung, SK ;

Park, JH .

APPLIED PHYSICS LETTERS, 1998, 73 (17) :2479-2481

[2] Excited states and energy relaxation in stacked InAs/GaAs quantum dots [J].

Heitz, R ;

Kalburge, A ;

Xie, Q ;

Grundmann, M ;

Chen, P ;

Hoffmann, A ;

Madhukar, A ;

Bimberg, D .

PHYSICAL REVIEW B, 1998, 57 (15) :9050-9060

[3] Selective growth of self-organizing InAs quantum dots on strained InGaAs surfaces [J].

Hiwatashi, F ;

Yamaguchi, K .

APPLIED SURFACE SCIENCE, 1998, 130 :737-741

[4] Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots [J].

Jung, SK ;

Hyon, CK ;

Park, JH ;

Hwang, SW ;

Ahn, D ;

Son, MH ;

Min, BD ;

Kim, Y ;

Kim, EK .

APPLIED PHYSICS LETTERS, 1999, 75 (08) :1167-1169

[5] Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates [J].

Konkar, A ;

Madhukar, A ;

Chen, P .

APPLIED PHYSICS LETTERS, 1998, 72 (02) :220-222

[6] Fabrication of strained InAs island ensembles on nonplanar patterned GaAs(001) substrates [J].

Konkar, A ;

Heitz, R ;

Ramachandran, TR ;

Chen, P ;

Madhukar, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :1334-1338

[7] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS [J].

MARZIN, JY ;

GERARD, JM ;

IZRAEL, A ;

BARRIER, D ;

BASTARD, G .

PHYSICAL REVIEW LETTERS, 1994, 73 (05) :716-719

[8] InAs quantum dot formation on GaAs pyramids by selective area MOVPE [J].

Umeda, T ;

Kumakura, K ;

Motohisa, J ;

Fukui, T .

PHYSICA E, 1998, 2 (1-4) :714-719

[9] Laser stimulated selective area growth of quantum dots [J].

Wanker, A ;

Schremer, AT ;

Shealy, JR .

APPLIED PHYSICS LETTERS, 1998, 72 (25) :3332-3334

[10] Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs(001) [J].

Xie, Q ;

Kalburge, A ;

Chen, P ;

Madhukar, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (08) :965-967

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