TBD prediction from measurements at low field and room temperature using a new estimator

被引：18

作者：

Ghetti, A ^{[1
]}

Bude, J ^{[1
]}

Weber, G ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2000年

关键词：

D O I：

10.1109/VLSIT.2000.852832

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We present a new method to predict oxide breakdown from measurements at low voltage and room temperature. The method is based on tunneling into interface states (TEDit). We show that TEDit correlates to breakdown. Then we exploit this correlation to predict oxide lifetime.

引用

页码：218 / 219

页数：2

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