Pronounced composition gradients in alloys under low-energy ion implantation at high fluence

被引:6
作者
Sigmund, P [1 ]
Glazov, LG
机构
[1] Odense Univ, Dept Phys, SDU, DK-5230 Odense M, Denmark
[2] Inst High Current Elect, Tomsk 634055, Russia
关键词
D O I
10.1016/S0168-583X(99)01114-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The composition profile of a multicomponent material exposed to low-energy ion bombardment is exceedingly sensitive to recoil implantation. Preferential recoil implantation causes depletion of one or more species in the nearsurface region, much like preferential sputtering. For an isotopic system, both processes are preferential in the lighter species but have opposite dependences on beam energy, the effect of recoil implantation being most pronounced near threshold. We have studied the problem for an isotopic system (Hg on Mo) on the basis of standard theory of atomic mixing. In order to isolate the effect of recoil implantation, both sputtering and cascade mixing have been assumed strictly stoichiometric. Pronounced composition gradients are predicted after high-fluence bombardment. It is shown that these gradients affect the sputter characteristics in the same direction as those induced by preferential sputtering. Comparison with low-energy high-fluence sputter experiments of Wehner and coworkers indicates that recoil implantation cannot be ignored in the interpretation bur is not solely responsible for the observed effect. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:453 / 459
页数:7
相关论文
共 14 条
[1]   DEPTH OF ORIGIN OF SPUTTERED ATOMS [J].
FALCONE, G ;
SIGMUND, P .
APPLIED PHYSICS, 1981, 25 (03) :307-310
[2]   THEORETICAL TREATMENT OF CASCADE MIXING IN DEPTH PROFILING BY SPUTTERING [J].
HOFER, WO ;
LITTMARK, U .
PHYSICS LETTERS A, 1979, 71 (5-6) :457-460
[3]  
Lindhard J, 1968, KGL DANSKE VIDENSKAB, V36, P1
[4]   RECOIL MIXING IN SOLIDS BY ENERGETIC ION-BEAMS [J].
LITTMARK, U ;
HOFER, WO .
NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3) :329-342
[5]   MASS EFFECTS ON ANGULAR-DISTRIBUTION OF SPUTTERED ATOMS [J].
OLSON, RR ;
KING, ME ;
WEHNER, GK .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3677-3683
[6]   Analysis of the primary process in isotope sputtering [J].
Shulga, VI ;
Sigmund, P .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 119 (03) :359-374
[7]   THEORETICAL ASPECTS OF ATOMIC MIXING BY ION-BEAMS [J].
SIGMUND, P ;
GRASMARTI, A .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :25-41
[8]   THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J].
SIGMUND, P .
PHYSICAL REVIEW, 1969, 184 (02) :383-+
[9]   SPUTTERING OF MULTICOMPONENT MATERIALS - ELEMENTS OF A THEORY [J].
SIGMUND, P ;
OLIVA, A ;
FALCONE, G .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3) :541-548
[10]  
SIGMUND P, 1987, NUCL INSTRUM METH B, V18, P375