Suboxide-related centre as the source of the intense red luminescence of porous Si

被引：30

作者：

Korsunskaya, NE

Torchinskaya, TV

Khomenkova, LY

Dzhumaev, BR

Prokes, SM

机构：

[1] Ukrainian Acad Sci, Inst Semicond, UA-252028 Kiev, Ukraine

[2] USN, Res Lab, Washington, DC 20375 USA

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 51-2卷

关键词：

porous silicon; photoluminescence; photoluminescence excitation; suboxide-related centre;

D O I：

10.1016/S0167-9317(99)00503-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of the preparation regime on the oxide composition as well as the photoluminescence (PL) and photoluminescence excitation (PLE) spectra of porous silicon have been investigated. The influence of the oxidation process during ageing at ambient atmosphere and annealing in dry oxygen of porous silicon has been studied via FL, PLE, infrared (IR) absorption and X-ray photoelectron emission spectroscopy (XPS). Results indicate a correlation between the suboxide concentration and the PL intensity. These results give further support to a suboxide-related colour centre as the source of the intense red luminescence. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：485 / 493

页数：9

共 14 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].