Schottky gating high mobility Si/Si1-xGex 2D electron systems

被引：10

作者：

Dunford, RB

Griffin, N

Paul, DJ

Pepper, M

Robbins, DJ

Churchill, AC

Leong, WY

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Def Evaluat & Res Agcy, Malvern WR14 3PS, Worcs, England

来源：

THIN SOLID FILMS | 2000年 / 369卷 / 1-2期

基金：

英国工程与自然科学研究理事会;

关键词：

silicon-germanium; two dimensional electron systems; modulation-doped field effect transistor; Schottky gating;

D O I：

10.1016/S0040-6090(00)00871-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A high mobility (3.6 x 10(5) cm(2)/V a) n-type Si/Si1-xGex heterostructure has been Schottky gated using An metal to cover the whole of the device. Over the front-gate voltage (V-g) range for which there was negligible gate leakage (-0.1 V < V-g < 0.1 V), the carrier density could be varied from 1.7 x 10(11)to 4.4 x 10(11) cm(-2). Measurements of the quantum lifetime suggested that the quality of the device varied in a manner not indicated by the transport mobility. This may arise from inhomogeneities caused by energy-level broadening. The results can be explained by a surface-roughened Au gate whose influence is negated at zero front-gate voltage due to a frozen-in screening charge in the doping layer. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

引用

页码：316 / 319

页数：4

共 13 条

[1] BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF STRAIN NONUNIFORMITIES IN SI1-XGEX/SI STRUCTURES [J].