Microstructure of indium oxide films in oxygen ion-assisted deposition

Changes of crystallinity and microstructure in undoped In2O3 films prepared by oxygen ion-assisted deposition were investigated using X-ray diffraction (XRD) and scanning electron microscope (SEM). The oxygen ion energy was changed from 60 to 500 eV during indium thermal evaporation. The crystallinity and microstructure of the films were closely related to the oxygen ion energy bombarded on the growing surface. Domain structure was obtained in the film deposited at 60 eV. By increasing the oxygen ion energy to 500 eV, the domain structure was changed to grain structure and the crystallinity became preferentially oriented along the [222] direction. It was observed that the electrical properties of the deposited films were closely related to the microstructure of the films. (C) 2000 Elsevier Science S.A. All rights reserved.