Effect on the excess P element in P-ion-implanted semi-insulating Fe-doped InP

The crystallinity of P+-ion implanted semi-insulating Fe-doped InP has been studied for various annealing stages. For 400 keV-implantation with a phosphorus dose of 5 x 10(15) cm(-2), Rutherford backscattering experiments show that the amorphous layer is not formed, but the implanted layer contains amorphous portions, indicating the broad Raman spectra. The improvement of the crystallinity started after annealing at 750 degrees C, accompanied by an increase in intensity of the LO phonon and a decrease in intensity of the TO phonon. A small reduction in the LO-TO phonon frequency splitting was observed in the annealed samples. This reduction is associated with the strain arising from lattice defects such as antisite defects, which are observed by a photoluminescence method.