OBSERVATION OF IN ANTISITE AND FE-RELATED DEFECTS IN 30-MEV ELECTRON-IRRADIATED FE-DOPED SEMIINSULATING INP

Photoluminescence (PL) spectra are reported and assigned to the Inp antisite in undoped and Fe-doped semi-insulating InP which was irradiated by 30-MeV electrons. In Fe-doped samples, the two PL emissions are at 30 and 117 meV above the valence band, and annihilate in an annealing stage from 300 to 350 degrees C. In-p defects in undoped samples are similar to 10(2) times smaller than those produced in Fe-doped InP. In Fe-doped samples, an emission is also observed near an emission relating to the deep In-p level. The produced defect is suggested to be a complex defect consisting of an iron impurity and an electron-irradiation-induced phosphorous vacancy.