Temperature dependence of the zero-phonon linewidth in quantum dots:: An effect of the fluctuating environment

被引:69
作者
Favero, I.
Berthelot, A.
Cassabois, G.
Voisin, C.
Delalande, C.
Roussignol, Ph.
Ferreira, R.
Gerard, J. M.
机构
[1] Ecole Normale Super, Lab Pierre Aigrain, F-75231 Paris 5, France
[2] UJF, CEA, CNRS, DRFM,CSP2M,Nanophys & Semicond Lab, F-38054 Grenoble 9, France
关键词
D O I
10.1103/PhysRevB.75.073308
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report systematic measurements on the broadening of the emission spectrum of single quantum dots as a function of temperature and incident power. Spectral diffusion effects in the motional narrowing regime provide a quantitative interpretation of our experimental results. We show that, at low incident power, the thermal activation of spectral diffusion results in a Lorentzian zero-phonon line with a width that increases linearly with temperature. Our study provides a unified interpretation to the widely debated issue of the dispersion of the data on the temperature dependence of this zero-phonon linewidth. Our explanation is based on an original model where acoustic phonons interact with carriers outside the quantum dot.
引用
收藏
页数:4
相关论文
共 19 条
[1]   Unconventional motional narrowing in the optical spectrum of a semiconductor quantum dot [J].
Berthelot, A. ;
Favero, I. ;
Cassabois, G. ;
Voisin, C. ;
Delalande, C. ;
Roussignol, Ph. ;
Ferreira, R. ;
Gerard, J. M. .
NATURE PHYSICS, 2006, 2 (11) :759-764
[2]  
BESCOMBES L, 2001, PHYS REV B, V63
[3]   Few-particle effects in single CdTe quantum dots [J].
Besombes, L ;
Kheng, K ;
Marsal, L ;
Mariette, H .
PHYSICAL REVIEW B, 2002, 65 (12) :1-4
[4]   ELECTRON RELAXATION IN QUANTUM DOTS BY MEANS OF AUGER PROCESSES [J].
BOCKELMANN, U ;
EGELER, T .
PHYSICAL REVIEW B, 1992, 46 (23) :15574-15577
[5]   Exciton dephasing via phonon interactions in InAs quantum dots: Dependence on quantum confinement [J].
Borri, P ;
Langbein, W ;
Woggon, U ;
Stavarache, V ;
Reuter, D ;
Wieck, AD .
PHYSICAL REVIEW B, 2005, 71 (11)
[6]   Ultralong dephasing time in InGaAs quantum dots [J].
Borri, P ;
Langbein, W ;
Schneider, S ;
Woggon, U ;
Sellin, RL ;
Ouyang, D ;
Bimberg, D .
PHYSICAL REVIEW LETTERS, 2001, 87 (15) :157401-157401
[7]   Photoluminescence spectroscopy of single CdSe nanocrystallite quantum dots [J].
Empedocles, SA ;
Norris, DJ ;
Bawendi, MG .
PHYSICAL REVIEW LETTERS, 1996, 77 (18) :3873-3876
[8]   Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots -: art. no. 233301 [J].
Favero, I ;
Cassabois, G ;
Ferreira, R ;
Darson, D ;
Voisin, C ;
Tignon, J ;
Delalande, C ;
Bastard, G ;
Roussignol, P ;
Gérard, JM .
PHYSICAL REVIEW B, 2003, 68 (23)
[9]   Voltage-controlled optics of a quantum dot -: art. no. 217401 [J].
Högele, A ;
Seidl, S ;
Kroner, M ;
Karrai, K ;
Warburton, RJ ;
Gerardot, BD ;
Petroff, PM .
PHYSICAL REVIEW LETTERS, 2004, 93 (21)
[10]   Line narrowing in single semiconductor quantum dots:: Toward the control of environment effects -: art. no. 041306 [J].
Kammerer, C ;
Voisin, C ;
Cassabois, G ;
Delalande, C ;
Roussignol, P ;
Klopf, F ;
Reithmaier, JP ;
Forchel, A ;
Gérard, JM .
PHYSICAL REVIEW B, 2002, 66 (04) :413061-413064