MOVPE GROWTH AND STRUCTURAL CHARACTERIZATION OF EXTREMELY LATTICE-MISMATCHED InP-InSb NANOWIRE HETEROSTRUCTURES

被引：3

作者：

Borg, B. M. ^{[1
]}

Messing, M. E. ^{[1
]}

Caroff, P. ^{[1
]}

Dick, K. A. ^{[1
]}

Deppert, K. ^{[1
]}

Wernersson, L-E. ^{[1
]}

机构：

[1] Lund Univ, Dept Solid State Phys, S-22100 Lund, Sweden

来源：

2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) | 2009年

关键词：

HIGH-QUALITY;

D O I：

10.1109/ICIPRM.2009.5012492

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a growth study and structural characterization of InP-InSb nanowire heterostructures. In contrast to planar epitaxy, this heterostructure can be realized in nanowires without the formation of dislocations, despite an extreme lattice-mismatch (10.4%). We obtain high crystal quality in the InSb nanowires, confirmed by a narrow 111 reflection peak measured by XRD. Additionally, the diameter dependence of the nanowire growth rate was investigated. An original competition between surface growth and nanowire growth is found, which can be controlled by varying the nanowire surface coverage. Finally, HRTEM and X-EDS investigations reveal that the InSb nanowire is always defect-free zinc-blende, and that the InP-InSb heterointerface is free from misfit dislocations, although single twin planes are common.

引用

页码：249 / 252

页数：4

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