Growth of high quality, epitaxial InSb nanowires

被引：50

作者：

Park, Hyun D. ^{[1
]}

Prokes, S. M.

Twigg, M. E.

Ding, Yong

Wang, Zhong Lin

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 304卷 / 02期

关键词：

epitaxial; nanowires; narrow bandgap; InSb;

D O I：

10.1016/j.jcrysgro.2007.03.023

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of InSb nanowires on an Insb(111) substrate in a closed system is described. A high density InSb nanowires was grown by the use of InSb substrates in a torch sealed quartz tube at a temperature of 400 degrees C, using a 60 nm size gold colloid catalyst. The typical diameter of the InSb nanowires was 80-200 nm and they consisted of nearly equal atomic percent of In and Sb. Transmission electron microscopy showed the wires to be single crystal, with a growth direction of < 110 >. (c) 2007 Elsevier B.V. All rights reserved.

引用

收藏

页码：399 / 401

页数：3

相关论文

共 15 条

[1] UNCOOLED HIGH-SPEED INSB FIELD-EFFECT TRANSISTORS [J].

ASHLEY, T ;

DEAN, AB ;

ELLIOTT, CT ;

PRYCE, GJ ;

JOHNSON, AD ;

WILLIS, H .

APPLIED PHYSICS LETTERS, 1995, 66 (04) :481-483

[2] Study of factors limiting electron mobility in InSb quantum wells [J].

Chung, SJ ;

Goldammer, KJ ;

Lindstrom, SC ;

Johnson, MB ;

Santos, MB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03) :1151-1154

[3] SOLID-STATE MAGNETIC-FIELD SENSORS AND APPLICATIONS [J].

HEREMANS, J .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (08) :1149-1168

[4]

HEREMANS J, 1993, SEMICOND SCI TECH, V8, P424

[5] PROPOSED SIZE-EFFECT HIGH-ELECTRON-MOBILITY TRANSISTOR [J].

KORNREICH, PG ;

WALSH, L ;

FLATTERY, J ;

ISA, S .

SOLID-STATE ELECTRONICS, 1986, 29 (04) :421-428

[6] Si-assisted growth of InAs nanowires [J].

Park, Hyun D. ;

Prokes, S. M. ;

Twigg, M. E. ;

Cammarata, Robert C. ;

Gaillot, Anne-Claire .

APPLIED PHYSICS LETTERS, 2006, 89 (22)

[7] Observation of size dependent liquidus depression in the growth of InAs nanowires [J].

Park, Hyun D. ;

Gaillot, Anne-Claire ;

Prokes, S. M. ;

Cammarata, Robert C. .

JOURNAL OF CRYSTAL GROWTH, 2006, 296 (02) :159-164

[8] VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E ) [J].

WAGNER, RS ;

ELLIS, WC .

APPLIED PHYSICS LETTERS, 1964, 4 (05) :89-&

[9]

WANG YW, 2006, APPL PHYS A, V84, P7

[10] Lead salt quantum dots: The limit of strong quantum confinement [J].

Wise, FW .

ACCOUNTS OF CHEMICAL RESEARCH, 2000, 33 (11) :773-780