Room-temperature InAsSb photovoltaic detectors for mid-infrared applications

被引：42

作者：

Shao, H. ^{[1
]}

Li, W. ^{[1
]}

Torfi, A. ^{[1
]}

Moscicka, D. ^{[1
]}

Wang, W. I. ^{[1
]}

机构：

[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 13-16期

关键词：

cutoff wavelength; detectivity; InAsSb; mid-infrared; photodetector; photovoltaic; quantum efficiency; room temperature; spectral photoresponse;

D O I：

10.1109/LPT.2006.879941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel noncryogenic InAsSb photovoltaic detectors grown by molecular beam epitaxy are proposed and demonstrated. The quaternary alloy In0.88Al0.12As0.80Sb0.20 is introduced as a wide bandgap barrier layer lattice matched to the GaSb substrate. The valence band edge of In0.88Al0.12As0.80Sb0.20 nearly matches with InAs0.91Sb0.09, leading to more efficient transport of photogenerated holes. The resulting mid-infrared photovoltaic detector exhibits a 50% cutoff wavelength of 4.31 mu m and a peak responsivity of 0.84 A/W at room temperature. High Johnson-noise-limited detectivity (D*) of 2.6 x 10(9) cm (.) Hz(1/2)/W at 4.0 mu m, and 4.2 x 10(10) cm (.) Hz(1/2)/W at 3.7 mu m are achieved at 300 K and 230 K, respectively.

引用

页码：1756 / 1758

页数：3

共 15 条

[1]

[Anonymous], 1975, SOL CELLS

[2] BACKSIDE-ILLUMINATED INASSB-GASB BROAD-BAND DETECTORS [J].