Neutron intrinsic gettering on electrical property of gate oxynitride in metal-oxide-Si capacitor

被引:4
作者
Chang-Liao, KS [1 ]
Yi, NK
Huang, JG
机构
[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan
[2] Taiwan Power Co, Div Nucl Power, Taipei, Taiwan
关键词
D O I
10.1063/1.126470
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electrical property of gate oxynitride in metal-oxide-Si capacitor is improved by a neutron-intrinsic-gettering (NIG) treatment. This improvement can be attributed to the reduction of nitrogen concentration in the oxynitride bulk and the decrease of interstitial oxygen defect in the silicon. For the oxynitride formed using NIG-treated Si substrate, the breakdown electric field is increased and the reliability is improved. A significant improvement of electrical property in gate oxynitride is observed by a NIG treatment including a fast neutron dose of 7.2x10(16) cm(-2) and an anneal at 1100 degrees C for 6 h. This NIG treatment would be promising for the improvement of electrical properties in gate oxynitrides. (C) 2000 American Institute of Physics. [S0003- 6951(00)00819-6].
引用
收藏
页码:2770 / 2772
页数:3
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