Chirped GaAs-AlAs distributed Bragg reflectors for high brightness yellow-green light-emitting diodes

被引：39

作者：

Chang, SJ ^{[1
]}

Chang, CS ^{[1
]}

Su, YK ^{[1
]}

Chang, PT ^{[1
]}

Wu, YR ^{[1
]}

Huang, KH ^{[1
]}

Chen, TP ^{[1
]}

机构：

[1] UNITED EXPITAXY CO LTD,HSINCHU 300,TAIWAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 02期

关键词：

AlGaInP; chirped distributed Bragg reflector; distributed Bragg reflector; GaAs-AlAs; light-emitting diodes; metal-organic chemical vapor deposition;

D O I：

10.1109/68.553084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel chirped distributed Bragg reflector (CDBR) structure was grown by metal-organic chemical vapor deposition (MOCVD) on a GaAs substrate where the optical thickness of each pair decreases monotonically from the bottom of the structure to the top surface, It was found that the fabricated CDBR structure can reflect yellow-green light with a maximum reflectivity of more than 80%, and it can reflect light more efficiently in a,wider wavelength range than the conventional DBR structure, Yellow-green AIGaInP LED's with the CDBR structure and the conventional DBR structure were both fabricated, It was found that by using the CDBR structure, one can achieve a higher luminescence intensity.

引用

页码：182 / 184

页数：3

共 9 条

[1]

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