Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/A10.3Ga0.7As Schottky diodes

被引：71

作者：

Huang, Jun-Rui

Hsu, Wei-Chou

Chen, Yeong-Jia

Wang, Tzong-Bin

Lin, Kun-Wei

Chen, Huey-Ing

Liu, Wen-Chau

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

[3] Chien Kuo Inst Technol, Dept Elect Engn, Changhua, Taiwan

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2006年 / 117卷 / 01期

关键词：

adsorption; hydrogen sensor; Schottky barrier height variation; Schottky diode; transient response;

D O I：

10.1016/j.snb.2005.11.020

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The hydrogen sensing characteristics of Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes are systematically studied and compared over wide hydrogen concentration and temperature ranges. Experimentally, upon exposing to hydrogen-containing gases, both of the studied Schottky-type hydrogen sensors can be operated under bi-polarity applied voltages attributed to the substantial increases of forward- and reverse-biased currents with increasing the hydrogen concentration. The Pd/GaN Schottky diode can be operated under higher temperature with larger Schottky barrier height modulation than that of Pd/Al0.3Ga0.7As. According to the van't Hoff equation, the hydrogen adsorption heat values are -18.24 and -10.36 kJ mol(-1) for the Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes, respectively. Experimentally, the Pd/Al0.3Ga0.7As and Pd/GaN Schottky diodes manifest faster adsorption and desorption responses at higher temperature (>= 400 K). (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：151 / 158

页数：8

共 29 条

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