Structural and Electronic Properties of PTCDA Thin Films on Epitaxial Graphene

被引：165

作者：

Huang, Han ^{[1
]}

Chen, Shi ^{[1
]}

Gao, Xingyu ^{[1
]}

Chen, Wei ^{[1
,2
]}

Wee, Andrew Thye Shen ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

来源：

ACS NANO | 2009年 / 3卷 / 11期

关键词：

epitaxial graphene; silicon carbide; PTCDA; scanning tunneling microscopy; photoemission spectroscopy; GRAPHITE; STM; GROWTH; GAS; 6H-SIC(0001); MOLECULES; CONTRAST; SURFACE; LEED;

D O I：

10.1021/nn9008615

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In situ low-temperature scanning tunneling microscopy is used to study the growth of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) on epitaxial graphene (EG) on 6H-SiC(0001), as well as on HOPG for comparison. PTCDA adopts a layer-by-layer growth mode, with its molecular plane lying flat on both surfaces. The PTCDA films grow continuously over the EG step edges, but not on HOPG. STS performed on single-layer PTCDA on monolayer EG shows a wide band gap larger than 3.3 eV, consistent with pristine PTCDA films. Synchrotron-based high-resolution photoemission spectroscopy reveals weak charge transfer between PTCDA and EG. This suggests weak electronic coupling between PTCDA and the underlying EG layer.

引用

页码：3431 / 3436

页数：6

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