A 277-GHz f(max) transferred-substrate heterojunction bipolar transistor

被引：12

作者：

Agarwal, B

Mensa, D

Pullela, R

Lee, Q

Bhattacharya, U

Samoska, L

Guthrie, J

Rodwell, MJW

机构：

[1] Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 05期

关键词：

D O I：

10.1109/55.568774

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a AIInAs/GaInAs transferred-substrate heterojunction bipolar transistor (HBT), Tbe transferred-substrate process permits fabrication of narrow and aligned collector-base and emitter-base junctions, reducing the collector-base capacitance and increasing the device f(max). A device with aligned 0.7-mu m emitter and 1.6-mu m collector stripes has extrapolated 277 GHz f(max) and 127 GHz f(tau), respectively.

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页码：228 / 231

页数：4

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