Fabrication of stress-induced SrRuO3 nanostructures by pulsed laser deposition

被引：7

作者：

Vasco, E

Dittmann, R

Karthäuser, S

Waser, R

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 79卷 / 4-6期

关键词：

D O I：

10.1007/s00339-004-2811-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The compressive stress originated in the coherent epitaxial-SrRuO3/LaAlO3 interface has been used as a nano-patterning tool for the creation of island and wire arrays in ultrathin (<20 nm) SrRuO3 films. The nanostructure, stoichiometry, and electrical properties of these arrays have been studied by X-ray diffraction, atomic force microscopy, Rutherford back-scattering spectroscopy and resistivity vs temperature measurements. The influence of the shadowing effect produced by the non-perpendicular incidence of the evaporated particles on the array morphology is discussed.

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收藏

页码：1461 / 1464

页数：4

相关论文

共 19 条

[1] Self-patterning nano-electrodes on ferroelectric thin films for gigabit memory applications [J].

Alexe, M ;

Scott, JF ;

Curran, C ;

Zakharov, ND ;

Hesse, D ;

Pignolet, A .

APPLIED PHYSICS LETTERS, 1998, 73 (11) :1592-1594

[2] Self-organized growth of nanostructure arrays on strain-relief patterns [J].

Brune, H ;

Giovannini, M ;

Bromann, K ;

Kern, K .

NATURE, 1998, 394 (6692) :451-453

[3] MAGNETIC INTERACTIONS IN TERNARY RUTHENIUM OXIDES [J].

CALLAGHAN, A ;

MOELLER, CW ;

WARD, R .

INORGANIC CHEMISTRY, 1966, 5 (09) :1572-+

[4] Growth mode transition from layer by layer to step flow during the growth of heteroepitaxial SrRuO3 on (001) SrTiO3 [J].

Choi, J ;

Eom, CB ;

Rijnders, G ;

Rogalla, H ;

Blank, DHA .

APPLIED PHYSICS LETTERS, 2001, 79 (10) :1447-1449

[5] PREPARATION OF Y-BA-CU OXIDE SUPERCONDUCTOR THIN-FILMS USING PULSED LASER EVAPORATION FROM HIGH-TC BULK MATERIAL [J].

DIJKKAMP, D ;

VENKATESAN, T ;

WU, XD ;

SHAHEEN, SA ;

JISRAWI, N ;

MINLEE, YH ;

MCLEAN, WL ;

CROFT, M .

APPLIED PHYSICS LETTERS, 1987, 51 (08) :619-621

[6] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA [J].

DOOLITTLE, LR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) :344-351

[7] Dynamic self-organization of strained islands during SiGe epitaxial growth [J].

Floro, JA ;

Chason, E ;

Sinclair, MB ;

Freund, LB ;

Lucadamo, GA .

APPLIED PHYSICS LETTERS, 1998, 73 (07) :951-953

[8] SiGe island shape transitions induced by elastic repulsion [J].

Floro, JA ;

Lucadamo, GA ;

Chason, E ;

Freund, LB ;

Sinclair, M ;

Twesten, RD ;

Hwang, RQ .

PHYSICAL REVIEW LETTERS, 1998, 80 (21) :4717-4720

[9] Direct measurement of strain effects on magnetic and electrical properties of epitaxial SrRuO3 thin films [J].

Gan, Q ;

Rao, RA ;

Eom, CB ;

Garrett, JL ;

Lee, M .

APPLIED PHYSICS LETTERS, 1998, 72 (08) :978-980

[10] INSITU DEPOSITION OF EPITAXIAL PBZRXTI(1-X)O3 THIN-FILMS BY PULSED LASER DEPOSITION [J].

HORWITZ, JS ;

GRABOWSKI, KS ;

CHRISEY, DB ;

LEUCHTNER, RE .

APPLIED PHYSICS LETTERS, 1991, 59 (13) :1565-1567