Hysteretic bipolar resistive switching characteristics in TiO2/TiO2-x multilayer homojunctions

被引：63

作者：

Do, Young Ho ^{[1
]}

Kwak, June Sik ^{[1
]}

Bae, Yoon Cheol ^{[2
]}

Jung, Kyooho ^{[3
]}

Im, Hyunsik ^{[3
]}

Hong, Jin Pyo ^{[1
,2
]}

机构：

[1] Hanyang Univ, Dept Phys, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea

[2] Hanyang Univ, Div Nanosemicond Engn, Seoul 133791, South Korea

[3] Dongguk Univ, Dept Semicond Sci, Seoul 100715, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 09期

关键词：

D O I：

10.1063/1.3224179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TiO2 (oxygen rich, region 1)/TiO2-x (oxygen poor, region 2) multilayer homojunctions were studied as alternative resistive switching structures for both high and low resistance transitions. Stable bipolar resistive switching characteristics, including stable switching speeds microseconds) and endurance behaviors, as well as long retention times (>10(4) s) were demonstrated. The nature of the resistive switching phenomenon in multilayer structures seems to be a combination of the conduction path and the redox reaction, resulting from the oxygen ions drifting between the oxygen rich and poor regions of the multilayer structures. A possible conduction sketch for bipolar switching behaviors is also discussed. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3224179]

引用

页数：3

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