The gyromagnetic ratio of the compensating donor centre in nitrogen-doped ZnSxSe1-x

被引:6
作者
Ogata, K [1 ]
Davies, JJ
Wolverson, D
Fujita, S
Fujita, S
机构
[1] Kyoto Univ, Venture Business Lab, Kyoto 6068501, Japan
[2] Univ Bath, Dept Phys, Bath BA2 7AY, Avon, England
[3] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan
关键词
D O I
10.1088/0268-1242/15/2/322
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The nature of the so-called deep donor that appears at a depth of about 50 meV when ZnSe is doped with nitrogen remains a matter of controversy. The centre is of considerable importance since it appears to act as a compensating centre which is (at least in part) responsible for the difficulties of obtaining effective acceptor concentrations in excess of 10(18) cm(-3). Several models have been suggested, the most favoured of which is that of a selenium vacancy associated with a substitutional nitrogen. However, although very recent total energy calculations support such a model, no conclusive evidence for this identification exists. Electrons trapped by the centre have a gyromagnetic ratio of 1.38, in contrast to the value of 1.11 for electrons bound at the normal, shallow (26 meV) donors in this material. In order to obtain a better understanding of the centre, we have used spin-flip Raman scattering experiments to determine how this g-value depends on composition in the nitrogen-doped ternary alloy ZnSxSe1-x, for x in the range 0 to 0.1. Surprisingly, we find that the g-value remains constant, in contrast to that for the shallow donors, which increases by 0.12 over the same composition range. The results present a significant challenge for theoretical calculation, since any microscopic model has to be reconciled with this invariance.
引用
收藏
页码:209 / 213
页数:5
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