THERMAL ANNEALING EFFECTS ON P-TYPE CONDUCTIVITY OF NITROGEN-DOPED ZNSE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Post-growth thermal annealing (e.g., 500 degrees C, 30 min), is proposed as one of the promising techniques to realize and to improve the quality of p-type ZnSe layers grown by metalorganic vapor phase epitaxy (MOVPE). The layers were grown at low temperature (350 degrees C) by photo-assisted MOVPE with doping nitrogen from tertiarybutylamine (t-BuNH(2)). The flow rate of t-BuNH(2) was limited to be relatively low, in order to avoid heavy doping, with which as-grown layers exhibited electrically high-resistivity; but the thermal annealing converted the layers to p-type. As the as-grown layers exhibited the stronger donor-to-acceptor pair recombination lines or the weaker donor-bound excitonic emission (I-x) lines in photoluminescence, the annealed layers resulted in higher net acceptor concentration, which was 1 x 10(17) cm(-)3 at the optimum conditions at present.