Optically induced migration of interstitial zinc in ZnSe: Caught in the act

被引：35

作者：

Chow, KH ^{[1
]}

Watkins, GD ^{[1
]}

机构：

[1] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.81.2084

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Optically detected EPR studies of zinc-vacancy-zinc-interstitial Frenkel pairs produced by 2.5 MeV electron irradiation at 4.2 K in ZnSe reveal transformations between pairs of differing separations induced by optical excitation at cryogenic temperatures. The interstitial is identified as the mobile constituent by directly observing its conversion between T-d sites surrounded by four Se atoms and those surrounded by four Zn atoms. The interstitials, therefore, have been caught in the act of a single recombination-enhanced diffusion half jump, uniquely revealing the exact path taken in the one-jump diffusion process.

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页码：2084 / 2087

页数：4

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