Structure of the B/Si(100) surface at low boron coverage studied by scanning tunnelling microscopy

被引：23

作者：

Kulakov, MA ^{[1
]}

Zhang, Z ^{[1
]}

Zotov, AV ^{[1
]}

Bullemer, B ^{[1
]}

Eisele, I ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST AUTOMAT & CONTROL PROC,VLADIVOSTOK 690041,RUSSIA

来源：

APPLIED SURFACE SCIENCE | 1996年 / 103卷 / 04期

关键词：

D O I：

10.1016/S0169-4332(96)00542-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Scanning tunnelling microscopy is used to study the structure of the B/Si(100) surface at low boron coverage, the surface being prepared by high-temperature annealing of heavily B-doped Si(100) samples. The surface reproducibly shows features which are identified as being induced by boron atoms. Based on high-resolution scanning tunnelling microscopy measurements performed at different tip-sample biases, a structural model of the boron-induced features is proposed. The effect of the formation conditions on the atomic structure of the B/Si(100) surface is discussed.

引用

页码：443 / 449

页数：7

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