ATOMIC-STRUCTURE AND BONDING OF BORON-INDUCED RECONSTRUCTIONS ON SI(001)

被引：104

作者：

WANG, YJ

HAMERS, RJ

KAXIRAS, E

机构：

[1] UNIV WISCONSIN,DEPT CHEM,MADISON,WI 53706

[2] HARVARD UNIV,DEPT PHYS,CAMBRIDGE,MA 02138

[3] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.74.403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scanning tunneling microscopy (STM) and tunneling spectroscopy have been used to investigate the local structural and electronic properties of boron-induced reconstructions on Si(001). Thermal decomposition of diborane produces three ordered reconstructions, which arise from ordered arrangements of three structural subunits, with a local boron coverage of 1/2 monolayer. A structural model is proposed which accounts for the observed STM features. The principal structural subunit is shown to be an ordered arrangement of four boron atoms at substitutional sites in the first bulklike silicon layer, which is then capped with ordered arrangements of silicon dimers and dimer vacancies. © 1995 The American Physical Society.

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页码：403 / 406

页数：4

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