ORDERED MONOLAYER STRUCTURES OF BORON IN SI(111) AND SI(100)

被引：24

作者：

HEADRICK, RL ^{[1
]}

WEIR, BE ^{[1
]}

LEVI, AFJ ^{[1
]}

FREER, B ^{[1
]}

BEVK, J ^{[1
]}

FELDMAN, LC ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 04期

关键词：

D O I：

10.1116/1.577307

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have prepared metastable, ordered monolayer structures of boron on Si(100) and Si(111) by silicon deposition atop unique surface reconstructions. These superlattice structures suggest possibilities for monolayer doping and ordered alloy structures with new electronic properties. In this paper we summarize our recent results in forming ordered structures and the electrical properties of the preserved layers.

引用

收藏

页码：2269 / 2272

页数：4

相关论文

共 16 条

[1]

AKIMOTO K, 1987, 19TH C SOL STAT DEV, P463

[2] SURFACE DOPING AND STABILIZATION OF SI(111) WITH BORON [J].

BEDROSSIAN, P ;

MEADE, RD ;

MORTENSEN, K ;

CHEN, DM ;

GOLOVCHENKO, JA ;

VANDERBILT, D .

PHYSICAL REVIEW LETTERS, 1989, 63 (12) :1257-1260

[3] LIMITING THICKNESS HEPI FOR EPITAXIAL-GROWTH AND ROOM-TEMPERATURE SI GROWTH ON SI(100) [J].

EAGLESHAM, DJ ;

GOSSMANN, HJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 65 (10) :1227-1230

[4] PRESERVATION OF A 7 X 7 PERIODICITY AT A BURIED AMORPHOUS-SI/SI(111) INTERFACE [J].

GIBSON, JM ;

GOSSMANN, HJ ;

BEAN, JC ;

TUNG, RT ;

FELDMAN, LC .

PHYSICAL REVIEW LETTERS, 1986, 56 (04) :355-358

[5] INITIAL-STAGES OF SILICON MOLECULAR-BEAM EPITAXY - EFFECTS OF SURFACE RECONSTRUCTION [J].

GOSSMANN, HJ ;

FELDMAN, LC .

PHYSICAL REVIEW B, 1985, 32 (01) :6-11

[6] THE INFLUENCE OF RECONSTRUCTION ON EPITAXIAL-GROWTH - GE ON SI(100)-2X1) AND SI(111)-(7X7) [J].

GOSSMANN, HJ ;

FELDMAN, LC ;

GIBSON, WM .

SURFACE SCIENCE, 1985, 155 (2-3) :413-431

[7] REORDERING OF RECONSTRUCTED SI-SURFACES UPON GE-DEPOSITION AT ROOM-TEMPERATURE [J].

GOSSMANN, HJ ;

FELDMAN, LC ;

GIBSON, WM .

PHYSICAL REVIEW LETTERS, 1984, 53 (03) :294-297

[8] STRUCTURE DETERMINATION OF THE SI(111) - B(SQUARE-ROOT-3 X SQUARE-ROOT-3)R 30-DEGREES SURFACE - SUBSURFACE SUBSTITUTIONAL DOPING [J].

HEADRICK, RL ;

ROBINSON, IK ;

VLIEG, E ;

FELDMAN, LC .

PHYSICAL REVIEW LETTERS, 1989, 63 (12) :1253-1256

[9] STABILITY OF BORON-INDUCED AND GALLIUM-INDUCED SURFACE-STRUCTURES ON SI(111) DURING DEPOSITION AND EPITAXIAL-GROWTH OF SILICON [J].

HEADRICK, RL ;

FELDMAN, LC ;

ROBINSON, IK .

APPLIED PHYSICS LETTERS, 1989, 55 (05) :442-444

[10] INFLUENCE OF SURFACE RECONSTRUCTION ON THE ORIENTATION OF HOMOEPITAXIAL SILICON FILMS [J].

HEADRICK, RL ;

WEIR, BE ;

BEVK, J ;

FREER, BS ;

EAGLESHAM, DJ ;

FELDMAN, LC .

PHYSICAL REVIEW LETTERS, 1990, 65 (09) :1128-1131