Trapped oxygen in the grain boundaries of ZnO polycrystalline thin films prepared by plasma-enhanced chemical vapor deposition

被引：69

作者：

Kim, YJ ^{[1
]}

Kim, HJ

机构：

[1] Kyonggi Univ, Dept Mat Sci, Kyonggi Do 442760, South Korea

[2] Seoul Natl Univ, Sch Mat Engn, Seoul 151742, South Korea

来源：

MATERIALS LETTERS | 1999年 / 41卷 / 04期

关键词：

trapped oxygen; ZnO polycrystalline thin films; plasma-enhanced chemical vapor deposition;

D O I：

10.1016/S0167-577X(99)00124-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO thin films were deposited on Si wafers and glass substrates using diethylzinc (Zn(C2H5)(2)) and Ar/N2O mixed gases by plasma-enhanced chemical vapor deposition (PECVD). The Zn:O ratio of the thin film was analyzed by Rutherford backscattering spectrometry (RBS). It was observed that the values were less than unity, which meant that excess oxygen existed in the films. It could be determined that this oxygen was located in the grain boundaries of the ZnO polycrystalline thin films from the results of RBS, cross-sectional TEM and the electrical properties by Hall measurement. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：159 / 163

页数：5

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