Magnetic properties of short period InGaMnAs/InGaAs superlattices

被引:6
作者
Sadowski, J
Mathieu, R
Svedlindh, P
Kanski, J
Karlsteen, M
Swiatek, K
Domagala, JZ
机构
[1] Univ Copenhagen, Niels Bohr Inst, DK-2100 Copenhagen, Denmark
[2] Chalmers Univ Technol, S-41296 Gothenburg, Sweden
[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[4] Univ Uppsala, Dept Mat Sci, S-75121 Uppsala, Sweden
关键词
D O I
10.12693/APhysPolA.102.687
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12 Angstrom or 24 Angstrom). The non-magnetic InGaAs spacer layers are 12 Angstrom thick. The composition (In content) in InGaMnAs and InGaAs was chosen in such a way that magnetic layers were: deep potential wells, high potential barriers, or shallow potential wells. For superlattices with 8 monolayer thick InGaMnAs magnetic layers and 4 monolayer thick,InGaAs non-magnetic spacers the temperatures of paramagnetic-to-ferromagnetic phase transition do not depend on the band offsets between InGaMnAs and InGaAs adjusted by the In content.
引用
收藏
页码:687 / 694
页数:8
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