Real-time studies of thin film growth: Measurement and analysis of X-ray growth oscillations beyond the anti-Bragg point

被引：37

作者：

Kowarik, S. ^{[1
,2
]}

Gerlach, A. ^{[1
,2
]}

Skoda, M. W. A. ^{[1
,2
]}

Sellner, S. ^{[1
]}

Schreiber, F. ^{[1
,2
]}

机构：

[1] Univ Tubingen, Inst Angew Phys, D-72076 Tubingen, Germany

[2] Univ Oxford, Oxford OX1 3QZ, England

来源：

EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS | 2009年 / 167卷

基金：

英国工程与自然科学研究理事会;

关键词：

BY-LAYER GROWTH; DIFFRACTION OSCILLATIONS; ELECTRON-DIFFRACTION; CRYSTAL-GROWTH; REFLECTIVITY; SURFACE; EPITAXY; TRANSITION; DEPENDENCE; DEPOSITION;

D O I：

10.1140/epjst/e2009-00930-y

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Monitoring X-ray growth oscillations, i.e. temporal oscillations of the X-ray reactivity during thin film growth, is an important technique for in-situ and real-time characterization of heteroepitaxy. Here we demonstrate the simultaneous acquisition and analysis of not only one, but a set of growth oscillations in a wide range of the reciprocal space (q-space). Importantly, the combined information of these growth oscillations removes ambiguities inherent in the analysis of a single (anti-Bragg) oscillation. Wide q-range measurements also enlarge the accessible parameter range in film thickness and roughness, as measurements at optimized q-values exhibit a larger amplitude and lower damping during growth. As an example we analyze oscillations at q = 1/2, 2/3, 3/4..., qBragg during molecular beam deposition of the organic semiconductor diindenoperylene using kinematic scattering theory. From this we derive the growth mode and the surface roughening with film thickness.

引用

页码：11 / 18

页数：8

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