Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown by molecular beam epitaxy and hydrogen treatment

被引：5

作者：

Lu, LW ^{[1
]}

Feng, SL ^{[1
]}

Liang, JB ^{[1
]}

Wang, ZG ^{[1
]}

Wang, J ^{[1
]}

Wang, Y ^{[1
]}

Ge, WK ^{[1
]}

机构：

[1] CHINESE ACAD SCI,INST SEMICOND,NATL LAB SUPERLATTICES & MICROSTRUCT,BEIJING 100083,PEOPLES R CHINA

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 169卷 / 04期

关键词：

D O I：

10.1016/S0022-0248(96)00473-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In AlGaAs/InGaAs/GaAs PM-HEMT structures, the characterization of deep centers, the degradation in electrical and optical properties and their effects on electrical performance of the PM-HEMTs have been investigated by DLTS, SIMS, PL and conventional van der Pauw techniques. The experimental results confirm that the deep level centers correlate strongly with the oxygen content in the AlGaAs layer, the PL response of PM-HEMTs, and the electrical performance of the PM-HEMTs. Hydrogen plasma treatment was used to passivate/annihilate these centers, and the effects of hydrogenation were examined.

引用

页码：637 / 642

页数：6

共 16 条

[1] STUDY OF OXYGEN INCORPORATION IN ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ACHTNICH, T ;

BURRI, G ;

ILEGEMS, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2537-2541

[2] ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1987, 35 (12) :6154-6164

[3] THE RELATION OF DOMINANT DEEP LEVELS IN MOCVD ALXGA1-XAS WITH GROWTH-CONDITIONS [J].

BHATTACHARYA, PK ;

MATSUMOTO, T ;

SUBRAMANIAN, S .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :301-304

[4]

CALLEJA E, 1989, PHYSICS DX CTR GAAS, V10, P73

[5]

DMOCHOWSKI JE, 1992, MATER SCI FORUM, V83, P751, DOI 10.4028/www.scientific.net/MSF.83-87.751

[6] ISOTHERMAL FREQUENCY SCAN DLTS [J].

FERENCZI, G ;

BODA, J ;

PAVELKA, T .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (02) :K119-K124

[7] MIDGAP STATES IN METALORGANIC VAPOR-PHASE EPITAXY GROWN ALXGA1-XAS [J].

HASHIZUME, T ;

HASEGAWA, H ;

OHNO, H .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :3394-3400

[8]

HOBSON WS, 1992, MATER SCI FORUM, V83, P1063, DOI 10.4028/www.scientific.net/MSF.83-87.1063

[9] CHEMICAL TRENDS IN THE ACTIVATION-ENERGIES OF DX CENTERS [J].

KUMAGAI, O ;

KAWAI, H ;

MORI, Y ;

KANEKO, K .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1322-1323

[10]

LU LW, 1993, ACTA PHYS SINICA, V42, P66

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